At present, CIGS thin film solar cells are the main production process: reactive sputtering, mixing sputtering, co-evaporation, sputtering selenium, sputtering, electrodeposition, screen printing.
Electrochemical Properties of CIGS Materials
The electrochemical properties (resistivity, conductivity type, carrier concentration, mobility) of the material mainly depend on the element composition ratio of the material and the inherent defects caused by deviations from the stoichiometric ratio (eg, vacancy, Atoms), in addition to non-intrinsic doping and grain boundaries.
The development of CIGS
The band gap of the CIS film is 1.04ev, and when the proper Ga is replaced by the substitution of Part In, the solid solution crystal of CuInSe2 and CuGaSe2 is referred to as CIGS. The band gap of the film can be adjusted in the range of 1.04-1.7. And the ideal polycrystalline thin film solar energy absorption layer ideal band gap of 1.5, showing the adjustment of Ga and In ratio.